| Part саны |
CL21C680JCANNNC |
SIRA14DP-T1-GE3 |
| Өндүрүүчү |
Samsung Electro-Mechanics |
Electro-Films (EFI) / Vishay |
| баяндоо |
CAP CER 68PF 100V C0G/NP0 0805 |
MOSFET N-CH 30V 58A PPAK SO-8 |
| саны бар |
2555 |
72432 |
| Datasheets |
1.CL10B104KB8NNNC.pdf2.CL10B104KB8NNNC.pdf |
|
| Download |
|
|
| Voltage - бааланган |
100V |
|
| чыдамкайлык |
±5% |
|
| Дизайнери (Max) |
0.030' (0.75mm) |
|
| Температура баасы |
C0G, NP0 |
|
| Көлөм / Dimension |
0.079' L x 0.049' W (2.00mm x 1.25mm) |
|
| катар |
CL |
TrenchFET® |
| Рейтинг |
- |
|
| Топтом / Case |
0805 (2012 Metric) |
PowerPAK® SO-8 |
| Пакет |
Tape & Reel (TR) |
|
| Operating Temperature |
-55°C ~ 125°C |
-55°C ~ 150°C (TJ) |
| монтаждык түрү |
Surface Mount, MLCC |
Surface Mount |
| коргошун Style |
- |
|
| коргошун Spacing |
- |
|
| Бийиктиги - Seated (Max) |
- |
|
| Өзгөчөлүктөрү |
- |
|
| Начар Rate |
- |
|
| Capacitance |
68 pF |
|
| Тиркемелер |
General Purpose |
|
| VGS (ж) (Max) @ Id |
2.2V @ 250µA |
|
| VGS (Max) |
+20V, -16V |
|
| технология |
MOSFET (Metal Oxide) |
|
| Камсыздоочу түзмөк Package |
PowerPAK® SO-8 |
|
| RDS On (Max) @ ID, VGS |
5.1 mOhm @ 10A, 10V |
|
| Power Dissipation (Max) |
3.6W (Ta), 31.2W (Tc) |
|
| А.Н. |
Cut Tape (CT) |
|
| Башка аттар |
SIRA14DP-T1-GE3CT |
|
| Moisture Sensitivity Даража (ЖМ) |
1 (Unlimited) |
|
| Manufacturer Standard Коргошун убакыт |
32 Weeks |
|
| Коргошун Free Status / RoHS Status |
Lead free / RoHS Compliant |
|
| Input Capacitance (МККС) (Max) @ VDS |
1450pF @ 15V |
|
| Gate Charge (Qg) (Max) @ VGS |
29nC @ 10V |
|
| FET түрү |
N-Channel |
|
| FET Feature |
- |
|
| Drive Voltage (Max RDS жөнүндө, Min RDS жөнүндө) |
4.5V, 10V |
|
| Source Voltage улана (Vdss) |
30V |
|
| одного Description |
N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8 |
|
| Current - Continuous Drain (ID) 25 ° C @ |
58A (Tc) |
|
